| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 125 V |
| Current Rating | 50.0 A |
| Case/Package | TO-3 |
| Power Rating | 250 W |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 250 W |
| Breakdown Voltage (Collector to Emitter) | 125 V |
| hFE Min | 20 @25A, 2V |
| hFE Max | 60 |
| Input Power (Max) | 250 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 39.5 mm |
| Size-Width | 26.2 mm |
| Size-Height | 8.7 mm |
| Operating Temperature | 200℃ (TJ) |
DESCRIPTION
●The BUV20 is silicon Multiepitaxial Planar NPN transistor mounted in jedec TO-3 metal case. It is intended for use in switching and linear applications in military and industrial equipment.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ NPN TRANSISTOR
●■ HIGH CURRENT CAPABILITY
●■ FAST SWITCHING SPEED
●■ HIGH RUGGEDNESS
●APPLICATIONS
●■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
●■ SWITCHING REGULATORS
ST Microelectronics
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ST Microelectronics
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