| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 8 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 40.0 A |
| Case/Package | TO-204-2 |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 250 W |
| Breakdown Voltage (Collector to Emitter) | 200 V |
| Continuous Collector Current | 40A |
| hFE Min | 20 @12A, 2V |
| Input Power (Max) | 250 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 250000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 38.86 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
SWITCHMODE™ Series NPN Silicon Power Transistor
●This device is designed for high speed, high current, high power applications.
●Features
●• High DC Current Gain:
● hFE min = 20 at IC = 12 A
●• Low VCE(sat), VCE(sat)
● max = 0.6 V at IC = 8 A
●• Very Fast Switching Times:
● TF max = 0.4 μs at IC = 25 A
●• These are Pb−Free Devices
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