| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Polarity | N-Channel |
| Power Dissipation | 95 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 13.5A |
| Rise Time | 80 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 95000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
Infineon
10 Pages / 0.41 MByte
Infineon
MOSFET N-CH 200V 14.5A TO220AB
Siemens Semiconductor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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Trans MOSFET N-CH 200V 13.5A 3Pin(3+Tab) TO-220AB
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MOSFET N-CH 200V 14.5A TO263
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Infineon
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Siemens Semiconductor
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