| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 160 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
The BUZ900P is a N-channel enhancement-mode Power MOSFET offers 160V drain source voltage and 8A continuous drain current.
● High speed switching
● Semefab designed and diffused
● High voltage
● High energy rating
● Integral protection diode
● BUZ905P complimentary P-channel
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4 Pages / 0.03 MByte
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20 Pages / 2.6 MByte
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