| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Rise/Fall Time | 4µs, 3.5µs (Max) |
| Input Voltage (DC) | 1.35 V |
| Output Voltage | 70 V |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.35 V |
| Input Current | 60 mA |
| Power Dissipation | 0.25 W |
| Rise Time | 6000 ns |
| Isolation Voltage | 7.5 kV |
| Breakdown Voltage (Collector to Emitter) | 70 V |
| Forward Current | 60 mA |
| Output Voltage (Max) | 70 V |
| Input Current (Min) | 60 mA |
| Reverse Breakdown Voltage | 6 V |
| Maximum Forward Voltage (Max) | 1.65 V |
| Forward Current (Max) | 60 mA |
| Fall Time | 24000 ns |
| Fall Time (Max) | 24 µs |
| Fall Time (Max) | 6 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Width | 6.6 mm |
| Size-Height | 2.54 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The CNY17-3-M is a 6-pin Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode. It is suitable for digital logic inputs, microprocessor inputs and industrial controls.
● Closely matched current transfer ratio (CTR) minimum unit-to-unit variation
● 70V Minimum high BVCEO
● 850V Maximum working insulation voltage
● 6000V High allowable overvoltage
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