CNY17F1 Datasheet PDF - Fairchild

Description

●The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

●Features

●■CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M)

●■VDE recognized

●– Add option V for white package (e.g., CNY17F2VM)

●– Add option ‘300’ for black package (e.g., CNY17F2300)

●■Current transfer ratio in select groups

●■High BVCEO—70V minimum (CNY17X/M, CNY17FX/M,MOC8106/7/8)

●■Closely matched current transfer ratio (CTR) minimizes unit to-unit variation.

●■Verylow coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability(CNY17FX/M, MOC810X)