CNY17F3SR2M Datasheet PDF - ON Semiconductor

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

●Features

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● High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)

● Closely Matched Current Transfer Ratio (CTR)

● Minimizes Unit-to-Unit Variation

● Current Transfer Ratio In Select Groups

● Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)

● Safety and Regulatory Approvals:

● UL1577, 4,170 VACRMS for 1 Minute

● DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage