TYPE | DESCRIPTION |
---|
Voltage Rating (DC) | 600 V |
Current Rating | 13.0 A |
Polarity | N-Channel |
Description
●The IGBT technology is the key to International Rectifier"s advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.
●This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
●Features
●• Fully isolated printed circuit board mount package
●• Switching-loss rating includes all "tail" losses
●• HEXFRED™ soft ultrafast diodes
●• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
International Rectifier
10 Pages / 0.24 MByte
International Rectifier
10 Pages / 0.26 MByte
Vishay Semiconductor
VISHAY CPV363M4K IGBT Array & Module Transistor, N Channel, 11A, 600V, 36W, 600V, Module
Vishay Semiconductor
VISHAY CPV363M4F IGBT Array & Module Transistor, N Channel, 16A, 600V, 36W, 600V, SIP
Vishay Semiconductor
Trans IGBT Module N-CH 600V 13A 13Pin IMS-2
VISHAY
Trans IGBT Module N-CH 600V 13A 36000mW 13Pin IMS-2
International Rectifier
600V UltraFast 8-25kHz 3-Phase Bridge IGBT in a IMS-2 package
International Rectifier
Igbt Sip Module 600V 6.8A Ims-2
VISHAY
Trans IGBT Module N-CH 600V 11A 36000mW 13Pin IMS-2
VISHAY
Trans IGBT Module N-CH 600V 11A 36000mW 13Pin IMS-2
International Rectifier
MOD IGBT 3PHASE INV 600V SIP
International Rectifier
600V Fast 1-8kHz 3-Phase Bridge IGBT in a IMS-2 package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.