| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 13 Pin |
| Case/Package | IMS-2 |
| Rise Time | 30.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Capacitance (Cies) | 1.6nF @30V |
| Input Power (Max) | 63 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 63000 mW |
VISHAY
11 Pages / 0.24 MByte
VISHAY
10 Pages / 0.22 MByte
Vishay Semiconductor
VISHAY CPV364M4U IGBT Array & Module Transistor, N Channel, 20A, 600V, 63W, 600V, Module
Vishay Semiconductor
VISHAY CPV364M4F IGBT Array & Module Transistor, N Channel, 27A, 600V, 63W, 600V, Module
VISHAY
CPV364M4KPbF Series 600V 24A Through Hole IGBT SIP Module - IMS-2
International Rectifier
600V UltraFast 8-25kHz 3-Phase Bridge IGBT in a IMS-2 package
VISHAY
Trans IGBT Module N-CH 600V 27A 63000mW 13Pin IMS-2
VISHAY
Trans IGBT Module N-CH 600V 20A 63000mW 13Pin IMS-2
International Rectifier
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
VISHAY
Trans IGBT Module N-CH 600V 20A 63000mW 13Pin IMS-2
Vishay Semiconductor
CPV364M4KPbF Series 600V 24A Through Hole IGBT SIP Module - IMS-2
International Rectifier
600V Fast 1-8kHz 3-Phase Bridge IGBT in a IMS-2 package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
