TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | PICOSTAR-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 180 mΩ |
Polarity | N-CH |
Power Dissipation | 500 mW |
Threshold Voltage | 850 mV |
Drain to Source Voltage (Vds) | 12 V |
Breakdown Voltage (Drain to Source) | 12 V |
Continuous Drain Current (Ids) | 2.1A |
Rise Time | 1.5 ns |
Input Capacitance (Ciss) | 200pF @6V(Vds) |
Input Power (Max) | 500 mW |
Fall Time | 3.8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500mW (Ta) |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 1 mm |
Size-Width | 0.64 mm |
Size-Height | 0.35 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This 140 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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