TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PowerTDFN-8 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 0.0031 Ω |
Polarity | N-Channel |
Power Dissipation | 3.1 W |
Threshold Voltage | 1.6 V |
Drain to Source Voltage (Vds) | 25 V |
Breakdown Voltage (Drain to Source) | 25 V |
Continuous Drain Current (Ids) | 100 A |
Rise Time | 15.9 ns |
Input Capacitance (Ciss) | 1780pF @12.5V(Vds) |
Input Power (Max) | 3.1 W |
Fall Time | 5.7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.1W (Ta) |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 5.8 mm |
Size-Width | 4.9 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
● Ultra Low Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 5mm × 6mm Plastic Package
● APPLICATIONS
● Point-of-Load Synchronous Buck Converter for
●Applications in Networking, Telecom and Computing Systems
● Optimized for Control or Synchronous FET Applications
●NexFET is a trademark of Texas Instruments.
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