| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PowerTDFN-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0023 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.2 W |
| Threshold Voltage | 1.1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 100 A |
| Rise Time | 16.2 ns |
| Input Capacitance (Ciss) | 3480pF @15V(Vds) |
| Input Power (Max) | 3.2 W |
| Fall Time | 10.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.8 mm |
| Size-Width | 5 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
● Optimized for 5V Gate Drive
● Ultralow Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 5-mm × 6-mm Plastic Package
● APPLICATIONS
● Notebook Point of Load
● Point-of-Load Synchronous Buck in Networking,
●Telecom and Computing Systems
● Optimized for Synchronous FET Applications
●NexFET is a trademark of Texas Instruments.
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