TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PowerTDFN-8 |
Drain to Source Resistance (on) (Rds) | 0.0084 Ω |
Polarity | N-Channel |
Power Dissipation | 3 W |
Threshold Voltage | 1.3 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 73.0 A |
Rise Time | 6.7 ns |
Input Capacitance (Ciss) | 700pF @15V(Vds) |
Input Power (Max) | 3 W |
Fall Time | 2.6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3W (Ta) |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 5.8 mm |
Size-Width | 5 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
● Optimized for 5V Gate Drive
● Ultralow Qg and Qgd
● Low Thermal Resistance
● Avalanche Rated
● Pb Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 5-mm × 6-mm Plastic Package
● APPLICATIONS
● Notebook Point of Load
● Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
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