CSD17308Q3 Datasheet PDF - TI

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFET power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

●Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 46°C/W when mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.Max RθJC = 4.5°C/W, pulse duration ≤100 μs, duty cycle ≤1%.

● Optimized for 5-V Gate Drive

● Ultra-Low Qg and Qgd

● Low Thermal Resistance

● Avalanche Rated

● Pb Free Terminal Plating

● RoHS Compliant

● Halogen Free

● VSON 3.3 mm × 3.3 mm Plastic Package

● APPLICATIONS

● Notebook Point of Load

● Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems