| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | PICOSTAR-3 |
| Drain to Source Resistance (on) (Rds) | 0.185 Ω |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 850 mV |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 1.5A |
| Rise Time | 1.3 ns |
| Input Capacitance (Ciss) | 145pF @15V(Vds) |
| Fall Time | 3.4 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.04 mm |
| Size-Width | 0.64 mm |
| Size-Height | 0.35 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This 200-mΩ, 30-V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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