TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | VSON-CLIP |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0019 Ω |
Polarity | N-Channel |
Power Dissipation | 108 W |
Threshold Voltage | 1.4 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 60A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 4420pF @15V(Vds) |
Fall Time | 3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.8W (Ta), 108W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Amplify electronic signals and switch between them with the help of Texas Instruments" CSD17575Q3T power MOSFET. Its maximum power dissipation is 2800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
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