TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 0.0024 Ω |
Polarity | N-Channel |
Power Dissipation | 216 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 40 V |
Breakdown Voltage (Drain to Source) | 40 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 7.3 ns |
Input Capacitance (Ciss) | 4680pF @20V(Vds) |
Input Power (Max) | 216 W |
Fall Time | 9.3 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 259W (Tc) |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.7 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
This 2.4 mΩ, 40 V, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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