TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | PowerTDFN-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0035 Ω |
Polarity | N-Channel |
Power Dissipation | 3.1 W |
Threshold Voltage | 1.8 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 7.8 ns |
Input Capacitance (Ciss) | 3840pF @30V(Vds) |
Input Power (Max) | 3.1 W |
Fall Time | 2.7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.1W (Ta), 156W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.8 mm |
Size-Width | 5 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD18531Q5A is a 60V N-channel NexFET™ Power MOSFET designed to minimize losses in power conversion applications. Suitable for DC to DC converters, secondary side synchronous rectifier, battery management and motor control applications.
● Ultra low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Logic level
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