TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | VSON-8 |
Drain to Source Resistance (on) (Rds) | 0.0047 Ω |
Polarity | N-Channel |
Power Dissipation | 116 W |
Threshold Voltage | 1.9 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 17A |
Rise Time | 5.5 ns |
Input Capacitance (Ciss) | 2750pF @30V(Vds) |
Fall Time | 2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.2W (Ta), 116W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power
●conversion applications.
●Features
●• Ultra Low Qg and Qgd
●• Low Thermal Resistance
●• Avalanche Rated
●• Logic Level
●• Pb Free Terminal Plating
●• RoHS Compliant
●• Halogen Free
●• SON 5 mm × 6 mm Plastic Package
●Applications
●• DC-DC Conversion
●• Secondary Side Synchronous Rectifier
●• Motor Control
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