TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | VSON-FET-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.01 Ω |
Polarity | N-Channel |
Power Dissipation | 3.2 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 50A |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 1140pF @30V(Vds) |
Fall Time | 3.2 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.2W (Ta), 75W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.8 mm |
Size-Width | 4.9 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD18537NQ5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in high-side synchronous buck converter applications.
● Ultra-low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Plastic package
● -55 to 150°C Operating junction temperature range
TI
Trans MOSFET N-CH 60V 62A 8Pin SON T/R
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