| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 4.0 mΩ |
| Polarity | N-CH |
| Power Dissipation | 250 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 200A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 5070pF @30V(Vds) |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 9.25 mm |
| Size-Height | 4.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This 60-V, 3.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TI
Trans MOSFET N-CH Si 60V 200A 4Pin(3+Tab) TO-263 T/R
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