TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | VSON-FET-8 |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0057 Ω |
Polarity | N-Channel |
Power Dissipation | 3.2 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 6.3 ns |
Input Capacitance (Ciss) | 1150pF @30V(Vds) |
Fall Time | 1.7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.2W (Ta), 116W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.1 mm |
Size-Width | 5 mm |
Size-Height | 1.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD18563Q5AT is a 60V N-channel NexFET™ Power MOSFET designed to minimize losses in power conversion applications. Suitable for DC to DC converters, secondary side synchronous rectifier, battery management and motor control applications.
● Ultra low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Logic level
TI
60V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150
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