CSD19503KCS Datasheet PDF - TI

Manufacturer:	TI
Category:	MOSFETs
Case Package:	TO-220-3
Description:	TO-220 N-CH 80V 100A
Documentation:	CSD19503KCS Datasheet (11 Pages)Pinout Diagram on8 PageHot Package Outline Dimension on8 Page 9 Page Part Numbering System on1 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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CSD19503KCS Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0076 Ω
Polarity	N-Channel
Power Dissipation	188 W
Threshold Voltage	2.8 V
Drain to Source Voltage (Vds)	80 V
Breakdown Voltage (Drain to Source)	80 V
Continuous Drain Current (Ids)	100A
Rise Time	3 ns
Input Capacitance (Ciss)	2730pF @40V(Vds)
Input Power (Max)	188 W
Fall Time	2 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	188W (Tc)