TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0026 Ω |
Polarity | N-Channel |
Power Dissipation | 300 W |
Threshold Voltage | 2.6 V |
Drain to Source Voltage (Vds) | 80 V |
Continuous Drain Current (Ids) | 150A |
Rise Time | 16 ns |
Input Capacitance (Ciss) | 7820pF @40V(Vds) |
Input Power (Max) | 300 W |
Fall Time | 6 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 4.7 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The CSD19505KCS is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in secondary-side synchronous rectifier applications.
● Ultra-low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Plastic package
● -55 to 175°C Operating junction temperature range
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