TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | VSON-FET-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0078 Ω |
Polarity | N-Channel |
Power Dissipation | 3.2 W |
Threshold Voltage | 2.8 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 100A |
Rise Time | 6 ns |
Input Capacitance (Ciss) | 2670pF @50V(Vds) |
Fall Time | 5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.2W (Ta), 96W (Tc) |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD19533Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom and secondary-side synchronous rectifier applications.
● Ultra-low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Plastic package
● -55 to 150°C Operating junction temperature range
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