| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | PICOSTAR-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.066 Ω |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 800 mV |
| Drain to Source Voltage (Vds) | 12 V |
| Continuous Drain Current (Ids) | 3.5A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 235pF @6V(Vds) |
| Fall Time | 41 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This CSD23382F4T power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with femtofet technology.
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