| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | PICOSTAR-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.175 Ω |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Threshold Voltage | 950 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 1.6A |
| Rise Time | 3.7 ns |
| Input Capacitance (Ciss) | 198pF @10V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.04 mm |
| Size-Width | 0.64 mm |
| Size-Height | 0.35 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Increase the current or voltage in your circuit with this CSD25483F4T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with femtofet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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