| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | UFBGA-6 |
| Number of Channels | 2 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.056 Ω |
| Polarity | Dual P-Channel |
| Power Dissipation | 750 mW |
| Threshold Voltage | 0.5 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 1.6A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 410pF @10V(Vds) |
| Input Power (Max) | 750 mW |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 750 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.5 mm |
| Size-Width | 1 mm |
| Size-Height | 0.625 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD75208W1015 is a NexFET™ dual P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low ON-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. It is suitable for use with load switch, battery protection and management applications.
● Common source configuration
● Small footprint
● Gate-source voltage clamp
● Halogen-free
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