| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | XFBGA-6 |
| Number of Channels | 2 Channel |
| Drain to Source Resistance (on) (Rds) | 5.9 mΩ |
| Polarity | N-CH |
| Power Dissipation | 2.3 W |
| Threshold Voltage | 750 mV |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | ±12 V |
| Continuous Drain Current (Ids) | 8A |
| Rise Time | 353 ns |
| Input Capacitance (Ciss) | 902pF @6V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 589 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 2300 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.15 mm |
| Size-Height | 0.2 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
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