| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WSON-FET-6 |
| Number of Channels | 2 Channel |
| Drain to Source Resistance (on) (Rds) | 27 mΩ |
| Polarity | N-CH |
| Power Dissipation | 2.3 W |
| Threshold Voltage | 600 mV, 600 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | ±20 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 469pF @10V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2300 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 × 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.
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