TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0125 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 2.1 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 15A |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 1400pF @30V(Vds) |
Input Power (Max) | 2.1 W |
Fall Time | 19 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The CSD88537NDT is a NexFET™ dual N-channel Power MOSFET designed to serve as a half bridge in low current motor control applications.
● Ultra-low Qg and Qgd
● Avalanche rated
● Halogen-free
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