| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 28 Pin |
| Supply Voltage (DC) | 5.00 V, 5.50 V (max) |
| Case/Package | SOIC-28 |
| Supply Current | 100 mA |
| Number of Positions | 28 Position |
| Clock Speed | 70.0 GHz |
| Access Time | 70 ns |
| Memory Size | 8000 B |
| Access Time(Max) | 70 ns |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | 0 ℃ |
| Supply Voltage | 4.5V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Operating Temperature | 0℃ ~ 70℃ |
The CY6264-70SNXC is a 8k high-performance CMOS static RAM organized as 8192 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable, an active HIGH chip enable and active LOW output enable and 3-state drivers. Both devices have an automatic power-down feature reducing the power consumption by over 70% when deselected. An active LOW write enable signal controls the writing/reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins, is written into the memory location addressed by the address present on the address pins. Reading the device is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
● CMOS for optimum speed/power
● Easy memory expansion with CE1, CE2 and OE
● TTL-compatible inputs and outputs
● Automatic power-down when deselected
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