| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO-8 |
| Power Dissipation | 30000 mW |
| Output Power | 10 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 30 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 4.06 mm |
| Size-Width | 5.08 mm |
| Size-Height | 2.18 mm |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
●10W – 28V – 1GHz SINGLE ENDED
●FEATURES
●• SIMPLIFIED AMPLIFIER DESIGN
●• SUITABLE FOR BROAD BAND APPLICATIONS
●• VERY LOW Crss
●• SIMPLE BIAS CIRCUITS
●• LOW NOISE
●• HIGH GAIN – 13 dB MINIMUM
●APPLICATIONS
●• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
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