| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 36 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 10A |
| hFE Min | 40 @4A, 1V |
| Input Power (Max) | 36 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 36000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
The versatility of this NPN D44H11FP GP BJT from STMicroelectronics makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
9 Pages / 0.18 MByte
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