TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 50 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.67 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
Continuous Collector Current | 10A |
hFE Min | 40 @4A, 1V |
hFE Max | 60 @2A, 1V |
Input Power (Max) | 60 W |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 50 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.4 mm |
Operating Temperature | 150℃ (TJ) |
The D44H11TU is a NPN Epitaxial Silicon Transistor offers 1V maximum low collector-emitter saturation voltage VCEsat @ 8A and 10A collector current (DC).
● Fast switching speeds
● Complement to KSE45H
Fairchild
4 Pages / 0.23 MByte
Fairchild
31 Pages / 0.72 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
5 Pages / 0.09 MByte
ST Microelectronics
Trans GP BJT NPN 80V 10A 50000mW 3Pin(3+Tab) TO-220 Tube
Fairchild
Trans GP BJT NPN 80V 10A 3Pin(3+Tab) TO-220
Multicomp
MULTICOMP D44H11 Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 15MHz, 50W, 10A, 60 hFE
Mospec
POWER TRANSISTORS(10A,30-80V,50W)
Boca Semiconductor
Trans GP BJT NPN 80V 20A 3Pin(3+Tab) TO-220
Rectron Semiconductor
10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.