| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 60 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 10A |
| hFE Min | 40 @4A, 1V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Height | 9.28 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
Complementary SiliconPower Transistors
● These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
●Features
●• Low Collector−Emitter Saturation Voltage
● VCE(sat)= 1.0 V (Max) @ 8.0 A
●• Fast Switching Speeds
●• Complementary Pairs Simplifies Designs
●• Pb−Free Packages are Available
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