| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-220-3 |
| Polarity | Dual P-Channel |
| Power Dissipation | 83.0 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 15A |
| hFE Min | 20 @4A, 1V |
| Input Power (Max) | 83 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Rail |
| Size-Height | 9.28 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Complementary Silicon Power Transistors
●These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.
●Features
●•Fast Switching - tf= 90 ns (Max)
●•Key Parameters Specified @ 100°C
●•Low Collector-Emitter Saturation Voltage - VCE(sat)= 1.0 V (Max) @ 8.0 A
●•Complementary Pairs Simplify Circuit Designs
●•Pb-Free Packages are Available
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
10 Pages / 0.15 MByte
ON Semiconductor
5 Pages / 0.09 MByte
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