| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -15.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 83 W |
| Gain Bandwidth Product | 50 MHz |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Thermal Resistance | 62.5℃/W (RθJC) |
| Continuous Collector Current | 15A |
| hFE Min | 20 @4A, 1V |
| Input Power (Max) | 83 W |
| DC Current Gain (hFE) | 35 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 83 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.28 mm |
| Size-Width | 4.83 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The D45VH10G is a -80V Silicon PNP Bipolar Complementary Power Transistor designed for high speed switching applications, such as switching regulators and high frequency inverters. The transistor is also well suited for drivers for high power switching circuits.
● Fast switching
● Low collector-emitter saturation voltage
● Complementary pairs simplify circuit designs
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