| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | DE-275X2 |
| Number of Positions | 8 Position |
| Polarity | N-Channel |
| Power Dissipation | 1.18 kW |
| Drain to Source Voltage (Vds) | 1 kV |
| Continuous Drain Current (Ids) | 16.0 A |
| Rise Time | 2.00 ns |
| Input Capacitance (Ciss) | 1800pF @800V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 5000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
● N-channel enhancement mode
● Common source push-pull pair
● Low Qg and Rg
● High dv/dt rating
● Nanosecond switching
● Low insertion inductance
IXYS Semiconductor
4 Pages / 0.13 MByte
IXYS Semiconductor
Trans RF MOSFET N-CH 1000V 16A 8Pin SMD
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