| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 30 MHz |
| Number of Pins | 6 Pin |
| Case/Package | DE-475 |
| Power Rating | 1.8 kW |
| Number of Positions | 6 Position |
| Polarity | N-Channel |
| Power Dissipation | 1.8 kW |
| Drain to Source Voltage (Vds) | 1 kV |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 5.00 ns |
| Input Capacitance (Ciss) | 5500pF @800V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1800000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The DE475-102N21A is a 1000V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
● High isolation voltage
● Excellent thermal transfer
● Increased temperature and power cycling capability
● IXYS advanced low Qg process
● Low gate charge and capacitances offer easier to drive and faster switching
● Very low insertion inductance
● No beryllium oxide (BeO) or other hazardous materials
● Easy to mount, no insulators needed
● High power density
IXYS Semiconductor
6 Pages / 0.13 MByte
IXYS Semiconductor
5 Pages / 0.28 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
