| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 31 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 900 mW |
| Threshold Voltage | 550 mV |
| Input Capacitance | 294 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 4A |
| Rise Time | 117 ns |
| Input Capacitance (Ciss) | 294pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 393 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 900mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The DMG3415U-7 is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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