| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92 |
| Drain to Source Resistance (on) (Rds) | 25.0 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1 W |
| Breakdown Voltage (Drain to Source) | 400 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 120 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ |
Advanced DMOS Technology
●Not recommended for new designs. For products in TO-92 (N3) package and TO-243AA (N8) package, please use DN3535 or DN3545 instead.
●These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
●Features
●❏ High input impedance
●❏ Low input capacitance
●❏ Fast switching speeds
●❏ Low on resistance
●❏ Free from secondary breakdown
●❏ Low input and output leakage
●Applications
●❏ Normally-on switches
●❏ Solid state relays
●❏ Converters
●❏ Linear amplifiers
●❏ Constant current sources
●❏ Power supply circuits
●❏ Telecom
Supertex
4 Pages / 0.07 MByte
Supertex
8 Pages / 0.65 MByte
Supertex
N-Channel Depletion-Mode Vertical DMOS FETs
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