| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Power Rating | 1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 17 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1 W |
| Drain to Source Voltage (Vds) | 400 V |
| Continuous Drain Current (Ids) | 0.12A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 200pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The DN2540N3-G is a N-channel depletion-mode vertical DMOS FET utilizing an advanced vertical DMOS structure and Supertex"s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and positive temperature coefficient inherent in MOS device. Characteristic of all MOS structure, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speed are desired.
● Low ON-resistance
● Free from secondary breakdown
● Low input and output leakage
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