| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 15 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 17 Ω |
| Polarity | N-Channel |
| Power Dissipation | 15 W |
| Drain to Source Voltage (Vds) | 400 V |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 300 pF |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 15W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Rail, Tube |
| Size-Length | 10.7 mm |
| Size-Width | 4.826 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, the transistor is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
● High input impedance
● Low input capacitance
● Fast switching speeds
● Low on-resistance
● Free from secondary breakdown
● Low input and output leakage
Microchip
8 Pages / 0.82 MByte
Microchip
9 Pages / 0.83 MByte
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6 Pages / 0.22 MByte
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2 Pages / 0.1 MByte
Supertex
Trans MOSFET N-CH 400V 0.5A 3Pin(3+Tab) TO-220
Microchip
Trans MOSFET N-CH 400V 0.5A 3Pin(3+Tab) TO-220
Supertex
Trans MOSFET N-CH 400V 0.5A 3Pin(3+Tab) TO-220
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