DS1225AD-70-IND Datasheet PDF - Dallas Semiconductor

DESCRIPTION

●The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition.

●FEATURES

●10 years minimum data retention in the absence of external power

●Data is automatically protected during power loss

●Directly replaces 8k x 8 volatile static RAM or EEPROM

●Unlimited write cycles

●Low-power CMOS

●JEDEC standard 28-pin DIP package

●Read and write access times as fast as 70 ns

●Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

●Full ±10% VCCoperating range (DS1225AD)

●Optional ±5% VCC operating range (DS1225AB)

●Optional industrial temperature range of -40°C to +85°C, designated IND