GENERAL DESCRIPTION
●The EN25B40 is a 4M-bit (512K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
●FEATURES
●• Single power supply operation
●\- Full voltage range: 2.7-3.6 volt
●• 4 M-bit Serial Flash
●\- 4 M-bit/512 K-byte/2048 pages
●\- 256 bytes per programmable page
●•High performance
●\- 75MHz clock rate
●• Low power consumption
●\- 5 mA typical active current
●\- 1 μA typical power down current
●• Flexible Sector Architecture:
●\- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
●32-Kbyte, and seven 64-Kbyte sectors
●• Software and Hardware Write Protection:
●\- Write Protect all or portion of memory via software
●\- Enable/Disable protection with WP# pin
●• High performance program/erase speed
●\- Byte program time: 7µs typical
●\- Page program time: 1.5ms typical
●\- Sector erase time: 300 to 800ms typical
●\- Chip erase time: 5 Seconds typical
●• Minimum 100K endurance cycle
●•Package Options
●\- 8 pins SOP 150mil body width
●\- 8 pins SOP 200mil body width
●\- 8 contact VDFN
●\- 8 pins PDIP
●\- All Pb-free packages are RoHS compliant
●•Commercial and industrial temperature Range
