| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 2370pF @25V(Vds) |
| Input Power (Max) | 208 W |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 208 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.2 mm |
| Size-Width | 5 mm |
| Size-Height | 20.1 mm |
N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-3PN
ON Semiconductor
8 Pages / 2.75 MByte
Fairchild
Power MOSFET, N Channel, 20A, 600V, 150mohm, 10V, 5V
ON Semiconductor
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Fairchild
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ON Semiconductor
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48A/50V/Unified MOSFET / RAIL
Fairchild
Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 600V ; Current - Continuous Drain (Id) @ 25
ON Semiconductor
Trans MOSFET N-CH 600V 20A 3Pin(3+Tab) TO-3P(N) Rail
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