TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.95 Ω |
Power Dissipation | 54 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 40 ns |
Input Capacitance (Ciss) | 470pF @25V(Vds) |
Input Power (Max) | 54 W |
Fall Time | 22 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 54 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FCD5N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 16nC)
● Low effective output capacitance (Coss.eff = 32pF)
● 100% avalanche tested
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DESIGN/PROCESS CHANGE NOTIFICATION
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