| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.079 Ω |
| Polarity | N-Channel |
| Power Dissipation | 312.5 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 35A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 6640pF @25V(Vds) |
| Input Power (Max) | 312.5 W |
| Fall Time | 73 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 312.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCH35N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 139nC)
● Low effective output capacitance (Coss.eff = 340pF)
● 100% avalanche tested
Fairchild
2 Pages / 0.07 MByte
Fairchild
9 Pages / 0.39 MByte
Fairchild
4 Pages / 0.15 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCH35N60 Power MOSFET, N Channel, 35A, 600V, 0.079Ω, 10V, 3V
ON Semiconductor
MOSFET N-CH 600V 35A TO-247
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
