| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.079 Ω |
| Power Dissipation | 312.5 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 6640pF @25V(Vds) |
| Input Power (Max) | 312.5 W |
| Fall Time | 73 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The FCH35N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Ultra low gate charge (Qg = 139nC)
● Low effective output capacitance (Coss.eff = 340pF)
● 100% avalanche tested
ON Semiconductor
8 Pages / 0.71 MByte
ON Semiconductor
7 Pages / 1.51 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FCH35N60 Power MOSFET, N Channel, 35A, 600V, 0.079Ω, 10V, 3V
ON Semiconductor
MOSFET N-CH 600V 35A TO-247
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